Pair charge correlations in silicon nanostructures

Nikolai T. Bagraev; Alexei D. Bouravleuv; Vitaly E. Gasumyants; Wolfgang Gehlhoff; Leonid E. Klyachkin; Anna M. Malyarenko; Alexander Naeser; Vladimir V. Romanov; Serguei A. Rykov; Ekaterina V. Vladimirskaya

doi:10.1117/12.347404

5 May 1999 Pair charge correlations in silicon nanostructures

Nikolai T. Bagraev, Alexei D. Bouravleuv, Vitaly E. Gasumyants, Wolfgang Gehlhoff, Leonid E. Klyachkin, Anna M. Malyarenko, Alexander Naeser, Vladimir V. Romanov, Serguei A. Rykov, Ekaterina V. Vladimirskaya

Author Affiliations +

Proceedings Volume 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (1999) https://doi.org/10.1117/12.347404
Event: International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 1998, St. Petersburg, Russian Federation

Abstract

We present the findings of the single-hole and pair-hole tunneling into the negative-U centers at the edges of the self-assembly longitudinal silicon quantum wells which are realized using the surface injection of self-interstitials and vacancies controlled in the process of non-equilibrium boron diffusion into the Si(100)-wafer.

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Nikolai T. Bagraev, Alexei D. Bouravleuv, Vitaly E. Gasumyants, Wolfgang Gehlhoff, Leonid E. Klyachkin, Anna M. Malyarenko, Alexander Naeser, Vladimir V. Romanov, Serguei A. Rykov, and Ekaterina V. Vladimirskaya "Pair charge correlations in silicon nanostructures", Proc. SPIE 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 May 1999); https://doi.org/10.1117/12.347404

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