Evaluation of the carrier effective mass and relaxation time in nonuniformly doped semiconductor structures on the basis of spectrophotometrical experiments

Vladislav V. Nelayev; Bronislav B. Sevruk

doi:10.1117/12.347407

5 May 1999 Evaluation of the carrier effective mass and relaxation time in nonuniformly doped semiconductor structures on the basis of spectrophotometrical experiments

Vladislav V. Nelayev, Bronislav B. Sevruk

Author Affiliations +

Proceedings Volume 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (1999) https://doi.org/10.1117/12.347407
Event: International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 1998, St. Petersburg, Russian Federation

Abstract

The numerical simulation of infrared reflection and transmission spectra for nonuniformly doped semiconductor structures (P and As in Si and Zn in GaAs) was performed. The radiation interaction with free electrons as well as phonons was taken into account. The possibility of determination of the carrier effective mass m* and relaxation time (tau) concentration dependencies from the spectrophotometrical measurements was established.

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Vladislav V. Nelayev and Bronislav B. Sevruk "Evaluation of the carrier effective mass and relaxation time in nonuniformly doped semiconductor structures on the basis of spectrophotometrical experiments", Proc. SPIE 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 May 1999); https://doi.org/10.1117/12.347407

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