Silicon-oxynitride films prepared for 157-nm attenuated phase-shifting masks

Hsuen-Li Chen; Lon A. Wang; L. S. Yeh; F. D. Lai

doi:10.1117/12.354314

26 July 1999 Silicon-oxynitride films prepared for 157-nm attenuated phase-shifting masks

Hsuen-Li Chen, Lon A. Wang, L. S. Yeh, F. D. Lai

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354314
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Suitable silicon-oxynitride films for constructing the attenuated phase shifting masks to be operated in the 157 nm excimer laser regime are obtained by varying the gas flow rations in a RF sputtering process. Characteristics of the films such as optical constants, material compositions, etching selectivity, surface profiles, and adhesion strength are experimentally analyzed. These results indicate that he silicon-oxynitride films thus fabricated can meet the requirements for building such APSM's working in the wavelength of 157 nm.

Citation Download Citation

Hsuen-Li Chen, Lon A. Wang, L. S. Yeh, and F. D. Lai "Silicon-oxynitride films prepared for 157-nm attenuated phase-shifting masks", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354314

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