Novel hardening methods of DUV chemically amplified photoresist by ion implantation and its application to new organic ARC material and bilayer process

Jun-Sung Chun; Hung-Eil Kim; Stanley Barnett; James Shih

doi:10.1117/12.350190

11 June 1999 Novel hardening methods of DUV chemically amplified photoresist by ion implantation and its application to new organic ARC material and bilayer process

Jun-Sung Chun, Hung-Eil Kim, Stanley Barnett, James Shih

Author Affiliations +

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350190
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

In the experiment, various ion species are implanted to the developed images to improve etching and thermal flow resistance of Deep UV chemically amplified resists. Among various ion species, it is found that Argon ion did not affect the photoresist thickness and critical dimension after ion implantation. Much improved results could be obtained. Untreated contact hole patterns start flowing on 120 degrees C and finally are filled up on 130 degrees C with noticeable film shrinkage. On the other hand, Argon implanted contact hole patterns are standing still up to 170 degrees C without any thickness shrinkage and CD variation. Application of higher temperature results in the protrusions at the bottom of the resist profiles. Pattern deformation after dry etching process can be prevented. Cross-sectional SEM micrographs of the ion implanted contact hole patterns show clear interface between the hardened and the unhardened. SIMS analysis of the ion implanted photoresists reveal the presence of the ions at the surface of the substrate, not in the resist. Detailed mechanistic study will be discussed. Application of this process to bilayer resist process and a new antireflective layer has been tried and evaluated. And also the effects of accelerating energy and ion dose on reflective index of carbonized layer have been investigated. RI analysis shows the change of n and k value according to energy and ion dose. It can be speculated that the transparent matrix resin changed to highly absorbing amorphous carbon based materials. It is quite sure for that the n and k value can be controlled for the application of bottom antireflective layer. This new ARC material is very compatible to resist and est to strip, compared to conventional Organic Bottom ARC material. Thickness optimization for the ARC, application to real device and etching characteristics are under development in our lab.

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Jun-Sung Chun, Hung-Eil Kim, Stanley Barnett, and James Shih "Novel hardening methods of DUV chemically amplified photoresist by ion implantation and its application to new organic ARC material and bilayer process", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350190

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