Paper
14 June 1999 Characterization of overlay tolerance requirements for via to metal alignment
John A. Allgair, Mike Schippers, Brad Smith, Richard C. Elliott, John D. Miller, John Charles Robinson
Author Affiliations +
Abstract
Decreasing metal interconnect dimensions have led to tighter overlay tolerance requirements to ensure via to metal contact. These strict requirements often test the alignment capability of a manufacturing line; therefore, careful characterization is required to justify the overlay specification limits. A variety of technique can be combined for overlay process characterization including electrical resistance measurements, optical overlay measurements, CD SEM via misalignments and x-section yield. Available characterization techniques are then used to fully study the process window. Characterization data will be presented for a copper interconnect process.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John A. Allgair, Mike Schippers, Brad Smith, Richard C. Elliott, John D. Miller, and John Charles Robinson "Characterization of overlay tolerance requirements for via to metal alignment", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); https://doi.org/10.1117/12.350811
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CITATIONS
Cited by 2 scholarly publications and 1 patent.
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KEYWORDS
Oxides

Overlay metrology

Scanning electron microscopy

Critical dimension metrology

Copper

Tolerancing

Metals

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