Device physics and focal plane array applications of QWIP and MCT

Meimei Z. Tidrow; William A. Beck; William W. Clark III; Herbert K. Pollehn; John W. Little; Nibir K. Dhar; Richard P. Leavitt; Stephen W. Kennerly; Daniel W. Beekman; Arnold C. Goldberg; Walter R. Dyer

doi:10.1117/12.344591

7 April 1999 Device physics and focal plane array applications of QWIP and MCT

Meimei Z. Tidrow, William A. Beck, William W. Clark III, Herbert K. Pollehn, John W. Little, Nibir K. Dhar, Richard P. Leavitt, Stephen W. Kennerly, Daniel W. Beekman, Arnold C. Goldberg, Walter R. Dyer

Author Affiliations +

Proceedings Volume 3629, Photodetectors: Materials and Devices IV; (1999) https://doi.org/10.1117/12.344591
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Infrared sensor technology is critical to many commercial and military defense applications. Traditionally, cooled infrared material systems such as indium antimonide, platinum silicide, mercury cadmium telluride, and arsenic doped silicon (Si:As) have dominated infrared detection. Improvement in surveillance sensors and interceptor seekers requires large size, highly uniform, and multicolor IR focal plane arrays involving medium wave, long wave, and very long wave IR regions. Among the competing technologies are the quantum well infrared photodetectors based on lattice matched or strained III-V material systems. This paper discusses cooled IR technology with emphasis on QWIP and MCT. Details will be given concerning device physics, material growth, device fabrication, device performance, and cost effectiveness for LWIR, VLWIR, and multicolor focal plane array applications.

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Meimei Z. Tidrow, William A. Beck, William W. Clark III, Herbert K. Pollehn, John W. Little, Nibir K. Dhar, Richard P. Leavitt, Stephen W. Kennerly, Daniel W. Beekman, Arnold C. Goldberg, and Walter R. Dyer "Device physics and focal plane array applications of QWIP and MCT", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344591

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