Characterization of self-assembled InGaAs/InGaP quantum dot mid-infrared photoconductive detectors grown by low-pressure MOCVD

Seong Sin Kim; Matthew Erdtmann; Manijeh Razeghi

doi:10.1117/12.344572

7 April 1999 Characterization of self-assembled InGaAs/InGaP quantum dot mid-infrared photoconductive detectors grown by low-pressure MOCVD

Seong Sin Kim, Matthew Erdtmann, Manijeh Razeghi

Author Affiliations +

Proceedings Volume 3629, Photodetectors: Materials and Devices IV; (1999) https://doi.org/10.1117/12.344572
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

We report the first self-assembled InGaAs/InGaP quantum dot intersubband infrared photoconductive detectors (QDIPs) grown on semi-insulating GaAs substrate by low pressure metal organic chemical vapor deposition (MOCVD). The InGaAs quantum dots were constructed on an InGaP matrix as self assembling in Stranski-Krastanow growth mode in optimum growth conditions. The detector structure was prepared for single layer and multi-stacked quantum dots for active region. Normal incident photoconductive response was observed at a peak wavelength of 5.5 micrometer with a high responsivity of 130 mA/W, and a detectivity of 4.74 X 10⁷ cm Hz^1/2/W at 77 K for multi-stack QDIP. Low temperature photoresponse of the single quantum dot photodetector was characterized. Peak response was obtained between 16 K and 60 K. The detailed dark current noise measurements were carried on single and multistack quantum dot infrared detectors. High photoconductive gain as 7.6 X 10³ biased at 0.5 V results in increasing the intersubband carrier relaxation time as two order of magnitude compared quantum well infrared photodetectors.

Citation Download Citation

Seong Sin Kim, Matthew Erdtmann, and Manijeh Razeghi "Characterization of self-assembled InGaAs/InGaP quantum dot mid-infrared photoconductive detectors grown by low-pressure MOCVD", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344572

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