Super-high-power operation of 0.98-um InGaAs(P)/InGaP/GaAs-broadened waveguide separate confinement heterostructure quantum well diode lasers

Dmitri Z. Garbuzov; Mikhail A. Maiorov; V. Khalfin; Maria G. Harvey; A. Al-Muhanna; Luke J. Mawst; Dan Botez; John C. Connolly

doi:10.1117/12.356942

6 August 1999 Super-high-power operation of 0.98-μm InGaAs(P)/InGaP/GaAs-broadened waveguide separate confinement heterostructure quantum well diode lasers

Dmitri Z. Garbuzov, Mikhail A. Maiorov, V. Khalfin, Maria G. Harvey, A. Al-Muhanna, Luke J. Mawst, Dan Botez, John C. Connolly

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Proceedings Volume 3625, Physics and Simulation of Optoelectronic Devices VII; (1999) https://doi.org/10.1117/12.356942
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

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Dmitri Z. Garbuzov, Mikhail A. Maiorov, V. Khalfin, Maria G. Harvey, A. Al-Muhanna, Luke J. Mawst, Dan Botez, and John C. Connolly "Super-high-power operation of 0.98-μm InGaAs(P)/InGaP/GaAs-broadened waveguide separate confinement heterostructure quantum well diode lasers", Proc. SPIE 3625, Physics and Simulation of Optoelectronic Devices VII, (6 August 1999); https://doi.org/10.1117/12.356942

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