Paper
29 April 1999 Terahertz excitation, transport, and spectroscopy of an AFM-defined quantum dot
Naser Qureshi, S. James Allen Jr., Itaru Kamiya, Yusui Nakamura, Hiroyuki Sakaki
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Abstract
We have investigated the terahertz photoresponse of a single semiconductor quantum dot, electrostatically defined by a sharp conducing Atomic Force Microscope tip in contact with a resonant tunneling diode structure. The quantum dot is excited by radiation from a Free Electron Laser in experiments both at room temperature and at cryogenic temperatures. Pronounced resonant tunneling features and classical rectification at frequencies from 0.3 to 3THz are observed in the I-V curves of these devices. These results demonstrate a novel approach to achieving terahertz excitation and studying transport in quantum dots.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Naser Qureshi, S. James Allen Jr., Itaru Kamiya, Yusui Nakamura, and Hiroyuki Sakaki "Terahertz excitation, transport, and spectroscopy of an AFM-defined quantum dot", Proc. SPIE 3617, Terahertz Spectroscopy and Applications, (29 April 1999); https://doi.org/10.1117/12.347118
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KEYWORDS
Quantum dots

Quantum wells

Electrons

Free electron lasers

Terahertz radiation

Diodes

Gallium arsenide

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