Development of a 128 X 4 HgCdTe hybrid FPAs using MBE grown on GaAs

Gehong Zeng; Junhong Su

doi:10.1117/12.318069

11 August 1998 Development of a 128 X 4 HgCdTe hybrid FPAs using MBE grown on GaAs

Gehong Zeng, Junhong Su

Proceedings Volume 3553, Detectors, Focal Plane Arrays, and Imaging Devices II; (1998) https://doi.org/10.1117/12.318069
Event: Photonics China '98, 1998, Beijing, China

Abstract

A hybrid HgCdTe 128 X 4 FPA for LWIR detection was fabricated. HgCdTe epilayers were grown on GaAs substrates by MBE. The n⁺ on p photodiodes were formed by boron ion implantation. The detector array was passivated with a combination of CdTe and ZnS layers to provide a harmonious transit range between HgCdTe surface and passivation layers. And the combination layers of CdTe and ZnS present a low charge densities and very good electrical properties. The mean product of zero bias differential resistance and area for the diode array was measured to be 3 (Omega) -cm² with a cutoff wavelength of 10.05 micrometers . TDI CCD readout circuits designed and fabricated especially for this 128 X 4 LWIR FPA with charge capacity of 1 to 1.5 X 10⁷ electrons. This shows the characteristics of HgCdTe detector array of the epilayers grown by MBE on GaAs substrates, and also indicates than n⁺ p junction formation process and the surface passivation procedure are useful in the fabrication of HgCdTe FPAs.

Citation Download Citation

Gehong Zeng and Junhong Su "Development of a 128 X 4 HgCdTe hybrid FPAs using MBE grown on GaAs", Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); https://doi.org/10.1117/12.318069

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