Enhanced hot-carrier-induced degradation of 0.25-um P-MOSFETs with oxide/nitride composite spacer compared to those with oxide spacer

Vijay Janapaty; Jiunn-Yann Tsai; Sharad Prasad

doi:10.1117/12.324387

28 August 1998 Enhanced hot-carrier-induced degradation of 0.25-μm P-MOSFETs with oxide/nitride composite spacer compared to those with oxide spacer

Vijay Janapaty, Jiunn-Yann Tsai, Sharad Prasad

Author Affiliations +

Proceedings Volume 3510, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis IV; (1998) https://doi.org/10.1117/12.324387
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

Nitride LDD spacer material presents itself as a viable option for oxide spacer because of two important reasons; 1) possibility of reducing in the contact-poly spacing 2) possibility of achieving higher drive current. However, as the Si-Si₃N₄ barrier height is lower than that of Si-SiO₂, hot-carrier degradation could be worse. To overcome this problem, it has been suggested that a thin layer SiO₂ be deposited under the nitride spacer to improve the hot-carrier response. Tomohisa et al. showed that oxide LDD spacer and oxide/nitride composite spacer N- MOSFETs show better hot-carrier response than those with nitride spacer. In this paper, we show that hot-carrier degradation of P-MOSFETs with oxide/Nitride composite spacer is significantly worse than that of oxide spacer devices.

Citation Download Citation

Vijay Janapaty, Jiunn-Yann Tsai, and Sharad Prasad "Enhanced hot-carrier-induced degradation of 0.25-μm P-MOSFETs with oxide/nitride composite spacer compared to those with oxide spacer", Proc. SPIE 3510, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis IV, (28 August 1998); https://doi.org/10.1117/12.324387

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