Production of ohmic contacts to AlxGa1-xAs of the n- and p-type conductivity with surface cleaning in atomic hydrogen

A. S. Vishnyakov; Valerii A. Kagadei; N. I. Kozhinova; L. M. Romas; Dmitry I. Proskurovsky

doi:10.1117/12.323987

4 September 1998 Production of ohmic contacts to Al_xGa_1-xAs of the n- and p-type conductivity with surface cleaning in atomic hydrogen

A. S. Vishnyakov, Valerii A. Kagadei, N. I. Kozhinova, L. M. Romas, Dmitry I. Proskurovsky

Author Affiliations +

Proceedings Volume 3506, Microelectronic Device Technology II; (1998) https://doi.org/10.1117/12.323987
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

Production the high-quality ohmic contacts to AlGaAs layers with high contents AlAs (more than 25 - 30%) is a complicated and still incompletely resolved problem. This is connected with the presence of a thick surface layer of native oxide. The possibility of producing contacts to Al_xGa_1-xAs with the use of preliminary cleaning of the surface in atomic hydrogen has been investigated. Used in the experiment were n- type (approximately 65% AlAs) and p-type (approximately 35% AlAs) Al_xGa_1-xAs substrates. The cleaning of the specimen surface in atomic hydrogen (T equals 300 - 400 C, t equals 10 - 90 min) and the deposition of the contact metal (Au/AuGeNi/AuGe for n-type, and Au/AuZn/Au for p-type) were conducted in a unified vacuum cycle. Annealing in the ambience of hydrogen was produced under T equals 400 - 520 C. The technological conditions required to realize the cleaning of the surface of Al_xGa_1-xAs in a thermal film deposition system with a moderate vacuum has been investigated. The AES method was used to find the cleaning modes that allow removal of the oxide film with the stoichiometric composition of Al_xGa_1-xAs retained. It has been shown that the operations of cleaning and metal deposition combined in a unified vacuum cycle make it possible to produce a high-quality low- resistance contact showing high adhesion.

Citation Download Citation

A. S. Vishnyakov, Valerii A. Kagadei, N. I. Kozhinova, L. M. Romas, and Dmitry I. Proskurovsky "Production of ohmic contacts to Al_xGa_1-xAs of the n- and p-type conductivity with surface cleaning in atomic hydrogen", Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); https://doi.org/10.1117/12.323987

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