BJT avalanche breakdown voltage improvement by introduction of a floating p-layer in the epitaxial collector region

Thomas Zimmer; M. Ndoye; N. Lewis; J. B. Duluc; Helene Fremont; Jean Paul Dom

doi:10.1117/12.323988

4 September 1998 BJT avalanche breakdown voltage improvement by introduction of a floating p-layer in the epitaxial collector region

Thomas Zimmer, M. Ndoye, N. Lewis, J. B. Duluc, Helene Fremont, Jean Paul Dom

Author Affiliations +

Proceedings Volume 3506, Microelectronic Device Technology II; (1998) https://doi.org/10.1117/12.323988
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

This paper describes a new method to improve the base- collector breakdown voltage of high frequency NPN bipolar transistor. It consists of introducing a suitable P floating region in the N collector by ion implantation or by molecular beam epitaxy. The basic profile of the intrinsic transistor is not changed. Computer device simulations show that a nearly 20% improvement of the base-collector breakdown voltage can be achieved in a common emitter configuration. Additional advantages are a reduction of the multiplication factor and an enhanced impact-ionization base current reversal voltage.

Citation Download Citation

Thomas Zimmer, M. Ndoye, N. Lewis, J. B. Duluc, Helene Fremont, and Jean Paul Dom "BJT avalanche breakdown voltage improvement by introduction of a floating p-layer in the epitaxial collector region", Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); https://doi.org/10.1117/12.323988

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