Parameters affecting megasonic power transmittance in the megasonic cleaning process

Yong-Hoon Kim; Jin-Hong Park; Keumhee H. Lee; Seong-Woon Choi; Hee-Sun Yoon; Jung-Min Sohn

doi:10.1117/12.328852

1 September 1998 Parameters affecting megasonic power transmittance in the megasonic cleaning process

Yong-Hoon Kim, Jin-Hong Park, Keumhee H. Lee, Seong-Woon Choi, Hee-Sun Yoon, Jung-Min Sohn

Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328852
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan

Abstract

The presence of contaminants and particles on the surface has been long recognized as a cause of reduced wafer yields and delayed mask TAT. Especially, as the device pitch is continuously decreasing below submicron, the size of the contaminants and particles which must be controlled is decreasing below quarter-micron. It is believed that the megasonic process with the SC-1 chemical is the most important wet cleaning process in particle removal technology. The megasonic cleaning, which is dependent on the transmittance of megasonic power, is a commonly used technique for removing particles on the surface of a photomask. In this paper, in terms of both simulation and experiment, the transmittance of sound was obtained by varying the liquid temperature, the inclined angle, and the thickness of the bottom plate in the inner bath. Finally, after comparison of experimental results with simulation ones, we obtained the transmittance characteristics with similar tendency.

Citation Download Citation

Yong-Hoon Kim, Jin-Hong Park, Keumhee H. Lee, Seong-Woon Choi, Hee-Sun Yoon, and Jung-Min Sohn "Parameters affecting megasonic power transmittance in the megasonic cleaning process", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); https://doi.org/10.1117/12.328852

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