Thin carbon nitride films deposited by laser ablation with an XeCl excimer laser

Armando Luches; Emilia D'Anna; Gilberto Leggieri; Maurizio Martino; Alessio Perrone; Guiseppe Majni; Paolo Mengucci; Eniko Gyorgy; Ion N. Mihailescu; Mihai A. Popescu

doi:10.1117/12.308600

26 May 1998 Thin carbon nitride films deposited by laser ablation with an XeCl excimer laser

Armando Luches, Emilia D'Anna, Gilberto Leggieri, Maurizio Martino, Alessio Perrone, Guiseppe Majni, Paolo Mengucci, Eniko Gyorgy, Ion N. Mihailescu, Mihai A. Popescu

Author Affiliations +

Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308600
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France

Abstract

Carbon nitride films were deposited on <111> Si substrates by pulsed laser ablation of graphite targets in low pressure (1 - 50 Pa) N₂ atmosphere. The irradiations were performed with an XeCl excimer laser at the fluences of 12 and 16 J/cm². Many different diagnostic techniques (SEM, RBS, XPS, XRD, TEM) have been applied to characterize the deposited layers. The deposition rate decreases with increasing ambient pressure. The N/C atomic ratio into the deposited films generally increases with increasing ambient pressure and laser fluence. N/C values up to 0.7 were inferred from the RBS spectra. There are evidences of the formation of quite large crystals, which have grown almost epitaxially on the <111> Si substrate. Heating of the substrates during depositions causes a reduction of the N/C ratio. Optical emission spectra of the laser plasma plume have been recorded and analyzed, to try to correlate plasma characteristics with the composition of the deposited films.

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Armando Luches, Emilia D'Anna, Gilberto Leggieri, Maurizio Martino, Alessio Perrone, Guiseppe Majni, Paolo Mengucci, Eniko Gyorgy, Ion N. Mihailescu, and Mihai A. Popescu "Thin carbon nitride films deposited by laser ablation with an XeCl excimer laser", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308600

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