DLC thin film growth under energetic particle bombardment: a comparison between PLD and rf-bias enhanced PLD

Thomas Klotzbuecher; Jens Gottmann; M. Meyer; David A. Wesner; Ernst-Wolfgang Kreutz

doi:10.1117/12.308599

26 May 1998 DLC thin film growth under energetic particle bombardment: a comparison between PLD and rf-bias enhanced PLD

Thomas Klotzbuecher, Jens Gottmann, M. Meyer, David A. Wesner, Ernst-Wolfgang Kreutz

Author Affiliations +

Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308599
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France

Abstract

Pulsed laser deposition with KrF-excimer laser radiation ((lambda) equals 248 nm, (tau) equals 25 ns) is used to grow thin films of diamond-like carbon (DLC) on Si substrates by material removal from a graphite target in vacuum (10^-5 - 10^-4 mbar) or in processing gas atmospheres (He, Ne, Ar, Kr, p approximately equals 10^-2 mbar). Additional ion bombardment is performed by extracting inert gas ions from a low pressure rf gas discharge which is ignited in the deposition chamber. Raman spectroscopy reveals that the sp³-content of the DLC films depends on the fluence of the laser radiation on the target, the substrate temperature and processing gas pressure. Especially the applied laser fluence and the inert gas pressure strongly influence the energy of the film-forming particles and therefore the relative amounts of sp² and sp³ bonds in the films. Using additional ion bombardment from the low pressure gas discharge leads to more nanoclustered films in the case of higher ion masses due to a more effective defect creation. However, the films are predominantly sp²-bonded, caused by substrate heating due to dissipation of electric energy at the substrate electrode.

Citation Download Citation

Thomas Klotzbuecher, Jens Gottmann, M. Meyer, David A. Wesner, and Ernst-Wolfgang Kreutz "DLC thin film growth under energetic particle bombardment: a comparison between PLD and rf-bias enhanced PLD", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308599

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