Attributes and drawbacks of submicron CMOS for IR FPA readouts

L. J Kozlowski

doi:10.1117/12.584058

14 September 1998 Attributes and drawbacks of submicron CMOS for IR FPA readouts

L. J Kozlowski

Proceedings Volume 3360, Infrared Readout Electronics IV; (1998) https://doi.org/10.1117/12.584058
Event: Aerospace/Defense Sensing and Controls, 1998, Orlando, FL, United States

Abstract

The availability of submicron CMOS has enabled the development of shingle-chip IR cameras having performance capabilities and on-chip functions which were previously impossible. Sensor designers are, however, encoutering and overcoming several challanges including steadily decreasing operating voltage.

Citation Download Citation

L. J Kozlowski "Attributes and drawbacks of submicron CMOS for IR FPA readouts", Proc. SPIE 3360, Infrared Readout Electronics IV, (14 September 1998); https://doi.org/10.1117/12.584058

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