Photoluminescence investigation of Dy incorporation into InP during liquid phase epitaxy

Balint Podor; Evgenie F. Venger; Tatyana Georgiyevn Kryshtab; Galina N. Semenova; Petro M. Lytvin; Mikhail P. Semtsiv

doi:10.1117/12.306213

20 April 1998 Photoluminescence investigation of Dy incorporation into InP during liquid phase epitaxy

Balint Podor, Evgenie F. Venger, Tatyana Georgiyevn Kryshtab, Galina N. Semenova, Petro M. Lytvin, Mikhail P. Semtsiv

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306213
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

The low-temperature photoluminescence and x-ray structural investigations of the properties of InP epilayers grown from indium melt with rare earth element dysprosium (Dy) addition are presented. The Dy addition influence on intensity, linewidth and spectral position of the near-band-gap emission and of vacancy-impurity bands at 0.75 - 1.1 eV is reported. The obtained data of the stoichiometry changes in InP epilayers grown with addition of Dy are considered. Low background doping level with free electron concentration below about 10¹⁴ cm^-3 at the room temperature for InP epilayers was achieved, that witnessed of the Dy strong gettering effect. It was also ascertained that Dy incorporated into the grown layers in various phases forms (like the inclusions) at lowest using concentration (C_L^Dy approximately 0.01 at.%).

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Balint Podor, Evgenie F. Venger, Tatyana Georgiyevn Kryshtab, Galina N. Semenova, Petro M. Lytvin, and Mikhail P. Semtsiv "Photoluminescence investigation of Dy incorporation into InP during liquid phase epitaxy", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306213

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