Diagnostics of noncrystalline films by using interference of Raman signals in thin and superthin films

Vladymyr M. Mitsa

doi:10.1117/12.306250

20 April 1998 Diagnostics of noncrystalline films by using interference of Raman signals in thin and superthin films

Vladymyr M. Mitsa

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306250
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

The depth dependence of Raman spectra of a-GeS₂-type films having a different optical thickness ((lambda) /4 and (lambda) /2) and their refractive index have been investigated. The model of a layered-inhomogeneous structure of film has been proposed. There have been distinguished: near-surface region (up to 50 angstroms), central part and transition film-substrate region (up to 300 angstroms).

Citation Download Citation

Vladymyr M. Mitsa "Diagnostics of noncrystalline films by using interference of Raman signals in thin and superthin films", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306250

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