Basics of luminescent diagnostics of the dislocation structure of SiC crystals

Ivan S. Gorban; Galina N. Mishinova

doi:10.1117/12.306212

20 April 1998 Basics of luminescent diagnostics of the dislocation structure of SiC crystals

Ivan S. Gorban, Galina N. Mishinova

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306212
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

The result of the studies of dislocation luminescence in SiC crystals are presented in the report. This semiconductor forms great number of polytypes which differs by periodical alternation of cubic and hexagonal layers in basic planes. High probability of periodic pack infringement caused by very little energy of stacking fault leads to variation of dislocation structures in different glide planes of this crystals. Shockly and Frank partial dislocations are sufficiently important. The dislocation luminescence as growth origin so as dislocations included in result of plastic deformation or high temperature annealing. In this case the spectra of dislocation luminescence are the indicators of processes of phase transitions. The influence of impurities on the dislocation luminescence centers is investigated. The models of structure of dislocation centers and the mechanism of radiative transitions are proposed.

Citation Download Citation

Ivan S. Gorban and Galina N. Mishinova "Basics of luminescent diagnostics of the dislocation structure of SiC crystals", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306212

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