Paper
29 June 1998 Novel ArF photoresist system using acrylic polymer
Bang-Chein Ho, Jui-Fa Chang, Ting-Chung Liu, Jian-Hong Chen
Author Affiliations +
Abstract
A novel resist for 193 nm lithography must be developed to fulfill the demands of future microelectronics fabrication processes. Enhancing 193 nm DUV single layer resist (SRL) materials has received extensive interest in recent years, which exclusively derivatized acrylic polymers due to the problem of absorption at 193 nm. In this work, we investigate acrylic polymers as a 193 nm DUV SLR material. Our acrylic polymer comprises of tertbutyl ester acid labile group and other groups. The resist system using the polymer displays a positive tone image in the presence of photoacid generator such as onium salts. This work also investigates the effects of acid number, acrylic polymer composition, molecular weight of acrylic polymer on 193 nm DUV SLR.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bang-Chein Ho, Jui-Fa Chang, Ting-Chung Liu, and Jian-Hong Chen "Novel ArF photoresist system using acrylic polymer", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312435
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Polymers

Photoresist materials

Deep ultraviolet

Semiconducting wafers

Microelectronics

Photoresist processing

Absorption

Back to Top