New model for the effect of developer temperature on photoresist dissolution

Chris A. Mack; Mark John Maslow; Atsushi Sekiguchi; Ronald A. Carpio

doi:10.1117/12.312374

29 June 1998 New model for the effect of developer temperature on photoresist dissolution

Chris A. Mack, Mark John Maslow, Atsushi Sekiguchi, Ronald A. Carpio

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312374
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

The effects of developer temperature on dissolution behavior for eight g-line and i-line resists, ranging from first- generation to state-of-the-art formulations, are characterized using development rate measurements. Using the RDA-790 development rate measurement tool, dissolution rates as a function of dose and depth into the resist were measured. Each data set was analyzed and the basic performance of rate versus photoactive compound concentrations was fit to appropriate models. The variation of these results with temperature of the developer solution has led to temperature-dependent characterization of the dissolution modeling parameters. Two such parameters, the maximum dissolution rate R_max and the dissolution selectivity parameter n, are shown to exhibit an Arrhenius behavior with well defined activation energies.

Citation Download Citation

Chris A. Mack, Mark John Maslow, Atsushi Sekiguchi, and Ronald A. Carpio "New model for the effect of developer temperature on photoresist dissolution", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312374

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