Multilevel Ge-Se Film Based Resist Systems

K. L. Tai; R. G. Vadimsky; E. Ong

doi:10.1117/12.933409

30 June 1982 Multilevel Ge-Se Film Based Resist Systems

K. L. Tai, R. G. Vadimsky, E. Ong

Proceedings Volume 0333, Submicron Lithography I; (1982) https://doi.org/10.1117/12.933409
Event: 1982 Microlithography Conferences, 1982, Santa Clara, United States

Abstract

Multilevel resist systems based on Ge-Se films make possible the use of optical projection printers for printing 0.5-1.0μm features. The four multilevel resist systems considered employ either a photosensitive or a photopassive polymer layer for planarization. In bilevel schemes the surface of the Ge-Se film is reacted in a Ag(CN)i- containing solution to form a A_g2Se imaging layer. No reacted Ge-Se is used as a sacrificial layer in trilevel schemes. Ge-Se films are resistant to attack by oxygen plasma and therefore make good masks for pattern transfer by dry (reactive ion) etching, to a thick underlying photopassive polymer layer. Because of their high absorbance (a 10⁵cm-1) in the ultraviolet and violet, Ge-Se patterns can also be used as exposure masks for transferring images to a thick underlying photosensitive polymer layer. The latter is "flood" exposed through the Ge-Se mask and wet developed. Both dry and wet processes provide steep wall-profile patterns in the polymer layer. The dry process provides superior feature size control while the wet process offers reduced processing cost. The exceptional lithographic performance exhibited by Ge-Se resist systems is attributed to a unique edge-sharpening effect; diffraction is compensated for by lateral silver diffusion in the Ag2Se layer. Patterns having 0.6μm lines and spaces are obtained over lcmXlcm fields with a defocus tolerance of 2.5μm using a standard Zeiss 10:1 reduction lens (N.A.=0.28, λ=436nm). Results indicate that optical lithography can practically print features in the size regime previously reserved for a-beam or x-ray based lithographic technologies.

Citation Download Citation

K. L. Tai, R. G. Vadimsky, and E. Ong "Multilevel Ge-Se Film Based Resist Systems", Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); https://doi.org/10.1117/12.933409

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