Paper
8 April 1998 Megahertz bandwidth AlxGa1-xN/GaN-based p-i-n detectors
Gary A. Smith, Michael J. Estes, Tuoc Dang, Arnel A. Salvador, Zhifang Fan, Guangyu Xu, Andrei Botchkarev, Hadis Morkoc, P. Wolf
Author Affiliations +
Abstract
This paper discuses recent results of time response and spectral responsivity measurements made on AlxGa1-xN/GaN-based p-i-n UV detector with .03 < x < 0.12, where x is the aluminum concentration. AlxGa1-xN/GaN-based p-i-n detectors with response times as fast as 6 ns corresponding to greater than 26 MHz bandwidths are reported. Peak spectral responsivities of homojunction Al.03Ga.97N p-i-n UV detectors were found to be as high as 0.08 A/W at 343 nm while those of the Al.1Ga.9N/GaN p-i-ns were as high as 0.15 A/W at 360 nm. Homojunction GaN and Al.03Ga.97N as well as p-Al.1Ga.9N/i-GaN/n-GaN structures were grown on sapphire substrates by reactive molecular beam epitaxy and processed into UV detectors. These p-i-n detectors were then characterized in terms of their time response and spectral responsivity. Attempts to measure the noise of the Al.03Ga.97N homojunction p-i-ns are also discussed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gary A. Smith, Michael J. Estes, Tuoc Dang, Arnel A. Salvador, Zhifang Fan, Guangyu Xu, Andrei Botchkarev, Hadis Morkoc, and P. Wolf "Megahertz bandwidth AlxGa1-xN/GaN-based p-i-n detectors", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304482
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Cited by 5 scholarly publications.
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KEYWORDS
Sensors

Gallium nitride

Ultraviolet detectors

Aluminum

Ultraviolet radiation

Gallium

Sapphire

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