Electrical transport properties of highly doped N-type GaN epilayers

Hyung Jae Lee; M. G. Cheong; Eun-Kyung Suh; Manijeh Razeghi

doi:10.1117/12.304496

8 April 1998 Electrical transport properties of highly doped N-type GaN epilayers

Hyung Jae Lee, M. G. Cheong, Eun-Kyung Suh, Manijeh Razeghi

Proceedings Volume 3287, Photodetectors: Materials and Devices III; (1998) https://doi.org/10.1117/12.304496
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Temperature-dependent Hall-effects in MOCVD-grown Si-doped GaN epilayers were measured as a function of temperature in the range 10-800 K. The results were satisfactorily analyzed in terms of a two-band model including the (Gamma) and impurity bands at lower temperatures than room. The (Gamma) band electrons are dominant only high temperatures. The ionized impurity scattering is the most important in the (Gamma) band except at very high temperatures.

Citation Download Citation

Hyung Jae Lee, M. G. Cheong, Eun-Kyung Suh, and Manijeh Razeghi "Electrical transport properties of highly doped N-type GaN epilayers", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304496

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