Comparison of the dark current from an AlGaAs/GaAs and AlGaN/GaN quantum well

A. F. M. Anwar; Kevin R. Lefebvre

doi:10.1117/12.304480

8 April 1998 Comparison of the dark current from an AlGaAs/GaAs and AlGaN/GaN quantum well

A. F. M. Anwar, Kevin R. Lefebvre

Author Affiliations +

Proceedings Volume 3287, Photodetectors: Materials and Devices III; (1998) https://doi.org/10.1117/12.304480
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

The calculation of the dark currents existing in a AlGaN/GaN quantum well IR photodetector is presented in this paper. The dark current is calculated from the electrons following from the n⁺ region through the top barrier and not from out of the quantum well. This is a result of the number of electron emitting a quantum well equaling the number of electrons being captured, resulting in a zero net current. The calculation of the current accounts for the redistribution of the density of states and the local velocity arising form the multiple quantum well structure. A comparison of the experimental results to the theoretical calculation of the transmission coefficient, the local velocity and the density of states demonstrate that the variation in the dark currents is a result of the variation in the growth process from one structure to another and not a function of the number of quantum wells. A comparison is made between an AlGaAs/GaAs based system and an AlGaN/GaN based system demonstrating a large reduction in the dark current.

Citation Download Citation

A. F. M. Anwar and Kevin R. Lefebvre "Comparison of the dark current from an AlGaAs/GaAs and AlGaN/GaN quantum well", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304480

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