Gain and threshold current density characteristics of 2-um GaInAsSb/AlGaAsSb MQW lasers with increased valence band offset

Tim C. Newell; Luke F. Lester; Xiaoying Wu; Yining Zhang; Allen L. Gray

doi:10.1117/12.304452

7 April 1998 Gain and threshold current density characteristics of 2-μm GaInAsSb/AlGaAsSb MQW lasers with increased valence band offset

Tim C. Newell, Luke F. Lester, Xiaoying Wu, Yining Zhang, Allen L. Gray

Author Affiliations +

Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304452
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Compressively strained 2 micrometer GaInAsSb quantum well lasers with large valence band offsets and broadened waveguides display a record characteristic temperature, T₀ equals 140 degrees Kelvin for a 4-QW laser and a differential efficiency of 0.74 for a pulsed 2-QW device. The T₀ of these antimonide lasers is 65% more than that reported for phosphide-based lasers operating at 2 micrometer wavelength. A room-temperature threshold current density as low as 173 A/cm² has been observed for a 2-QW device and 225 A/cm² for the 4-QW laser.

Citation Download Citation

Tim C. Newell, Luke F. Lester, Xiaoying Wu, Yining Zhang, and Allen L. Gray "Gain and threshold current density characteristics of 2-μm GaInAsSb/AlGaAsSb MQW lasers with increased valence band offset", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304452

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