Pulsed-laser-induced damage in semiconductors Ge, ZnS, and ZnSe at 10.6um

Sebastian Lefranc; Eugene M. Kudriavtsev; Michel L. Autric

doi:10.1117/12.307013

20 April 1998 Pulsed-laser-induced damage in semiconductors Ge, ZnS, and ZnSe at 10.6um

Sebastian Lefranc, Eugene M. Kudriavtsev, Michel L. Autric

Proceedings Volume 3244, Laser-Induced Damage in Optical Materials: 1997; (1998) https://doi.org/10.1117/12.307013
Event: Laser-Induced Damage in Optical Materials: 1997, 1997, Boulder, CO, United States

Abstract

Laser irradiation induced damage to several materials of interest for use as 10.6 micrometers laser system windows is investigated in this paper. The irradiation source in these single shot experiments was a pulsed TEA CO₂ laser. Damage initiation in semiconductors has been studied during the interaction by measuring the variation of the transmitted intensity of a He- Ne and a CO₂ cw lasers through the samples. Results show that damages appear at the beginning of the laser-matter interaction process on both surfaces and in the bulk of the materials. The damaged materials have been characterized for various incident fluences by means of optical microscopy and scanning electron microscopy in terms of topography and morphology. The modified surface chemical analysis and the structural analysis have been carried out using energy dispersive x-ray and Raman spectroscopy.

Citation Download Citation

Sebastian Lefranc, Eugene M. Kudriavtsev, and Michel L. Autric "Pulsed-laser-induced damage in semiconductors Ge, ZnS, and ZnSe at 10.6um", Proc. SPIE 3244, Laser-Induced Damage in Optical Materials: 1997, (20 April 1998); https://doi.org/10.1117/12.307013

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