High-speed measurements of solid state plasma excitation and recombination processes using microwave and laser radiation

Serge V. Garnov; A. I. Ritus; Sergei M. Klimentov; Sergej M. Pimenov; Vitali I. Konov; S. Gloor; Willy A.R. Luethy; Heinz P. Weber

doi:10.1117/12.306982

20 April 1998 High-speed measurements of solid state plasma excitation and recombination processes using microwave and laser radiation

Serge V. Garnov, A. I. Ritus, Sergei M. Klimentov, Sergej M. Pimenov, Vitali I. Konov, S. Gloor, Willy A.R. Luethy, Heinz P. Weber

Author Affiliations +

Proceedings Volume 3244, Laser-Induced Damage in Optical Materials: 1997; (1998) https://doi.org/10.1117/12.306982
Event: Laser-Induced Damage in Optical Materials: 1997, 1997, Boulder, CO, United States

Abstract

Ultra-fast processes of recombination of free charge carriers optically generated in natural and chemical vapor deposited (CVD) diamond materials; GaAs and Si, were investigated with a 1 nanosecond time resolution by applying a developed microwave-radiation-based technique. Time-dependent responses of reflection and transmission of 2 mm wavelength electromagnetic CW-radiation were recorded when the tested specimens were irradiated by single laser pulses of IR, visible and UV spectral range. A waveguide configuration was used to measure the exponential fall of the reflection/transmission signals corresponding to the recombination times of free carriers. Depending on the material, impurity contamination and laser wavelength, the measured signals were varied from a few to several hundred nanoseconds. The measured recombination times in the bulk of natural and CVD diamond specimens were found to be of 2-4 ns. The distinguished difference between the surface and bulk recombination times was clearly demonstrate in the case of GaAs and Si. Applicability and relevance of the applied technique to non-equilibrium carrier lifetimes measurements and the validity of the result obtained are discussed and confirmed on the base of the analytical analysis of the time- dependent microwave radiation reflection/transmission in a solid excited with high intense laser pulses.

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Serge V. Garnov, A. I. Ritus, Sergei M. Klimentov, Sergej M. Pimenov, Vitali I. Konov, S. Gloor, Willy A.R. Luethy, and Heinz P. Weber "High-speed measurements of solid state plasma excitation and recombination processes using microwave and laser radiation", Proc. SPIE 3244, Laser-Induced Damage in Optical Materials: 1997, (20 April 1998); https://doi.org/10.1117/12.306982

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KEYWORDS

Microwave radiation

Chemical vapor deposition

Plasma

Solid state lasers

Diamond

Gallium arsenide

Silicon

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