Bandgap engineered materials for quantum effect opto-electronic devices

Petar B. Atanackovic

doi:10.1117/12.293486

14 November 1997 Bandgap engineered materials for quantum effect optoelectronic devices

Petar B. Atanackovic

Proceedings Volume 3241, Smart Materials, Structures, and Integrated Systems; (1997) https://doi.org/10.1117/12.293486
Event: Far East and Pacific Rim Symposium on Smart Materials, Structures, and MEMS, 1997, Adelaide, Australia

Abstract

Epitaxial growth techniques allow the precise growth of ultra thin semiconductor heterojunctions. The wave particle duality of electrons in such materials can be fully exploited in designing tailor made optical and electronic properties. The basic theory of electronic and optical properties of quantum wells described for the lattice matched GaAs/AlGaAs system. Optical modulation using the quantum confined Stark effect in p-i-n diodes and n-i-n phototransistors is described. Calculations showing the unique valence band warping effects in strained layer CdTe/CdZnTe quantum wells is presented. A CdTe/CdZnTe n-i-n optoelectronic device is described and performance discussed.

Citation Download Citation

Petar B. Atanackovic "Bandgap engineered materials for quantum effect optoelectronic devices", Proc. SPIE 3241, Smart Materials, Structures, and Integrated Systems, (14 November 1997); https://doi.org/10.1117/12.293486

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