Clear-field reticle defect disposition for advanced sub-half-micron lithography

Kent B. Ibsen; John Robert Ilzhoefer; Mark D. Eickhoff

doi:10.1117/12.301182

12 February 1997 Clear-field reticle defect disposition for advanced sub-half-micron lithography

Kent B. Ibsen, John Robert Ilzhoefer, Mark D. Eickhoff

Proceedings Volume 3236, 17th Annual BACUS Symposium on Photomask Technology and Management; (1997) https://doi.org/10.1117/12.301182
Event: 17th Annual BACUS Photomask Technology and Management, 1997, Redwood City, CA, United States

Abstract

The focus of this work is to provide a methodology to accurately disposition clear field contaminants at the reticle inspection station. A test mask was designed with programmed resist and chrome defects to simulate clear field contamination. Wafers were printed using a variety of 0.50 micrometer/0.35 micrometer/0.25 micrometer lithography processes. We determine printability using I-line and DUV resist under different illumination conditions. We demonstrate that aerial image simulation and defect size are the most practical methodologies to disposition semi-transparent defects. We show aerial image simulation to correlate with printed wafer results for soft defects.

Citation Download Citation

Kent B. Ibsen, John Robert Ilzhoefer, and Mark D. Eickhoff "Clear-field reticle defect disposition for advanced sub-half-micron lithography", Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); https://doi.org/10.1117/12.301182

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