Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique

Yi Ma; J. L. Lee; Janet Benton; T. Boone; David J. Eaglesham; G. S. Higashi

doi:10.1117/12.284683

2 September 1997 Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique

Yi Ma, J. L. Lee, Janet Benton, T. Boone, David J. Eaglesham, G. S. Higashi

Author Affiliations +

Proceedings Volume 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing; (1997) https://doi.org/10.1117/12.284683
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

Metallic contamination was monitored with Surface Photovoltage (SPV) technique in integrated circuit manufacturing facilities. Conventionally, Czochralski silicon bulk materials were used as monitor wafers. However, it has been observed that the diffusion length and the `Iron' concentration measured with SPV were inconsistent from run to run in one facility. The inconsistency is believed to be due to oxygen precipitate in silicon materials during the thermal cycle. By using low oxygen concentration or Float Zone wafers, metallic contaminants can be monitored more accurately and consistently.

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Yi Ma, J. L. Lee, Janet Benton, T. Boone, David J. Eaglesham, and G. S. Higashi "Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique", Proc. SPIE 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing, (2 September 1997); https://doi.org/10.1117/12.284683

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