Statistical design of experimental analysis of TiN films deposited by ion metal plasma PVD for sub-0.25-um IC process applications

Simon Hui; Ken Ngan; Murali K. Narasimhan; John Forster

doi:10.1117/12.284659

5 September 1997 Statistical design of experimental analysis of TiN films deposited by ion metal plasma PVD for sub-0.25-um IC process applications

Simon Hui, Ken Ngan, Murali K. Narasimhan, John Forster

Author Affiliations +

Proceedings Volume 3214, Multilevel Interconnect Technology; (1997) https://doi.org/10.1117/12.284659
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

A Vectra IMP^TM (Ion Metal Plasma) source was used to deposit TiN films for application such as W plug liner and Al wetting layer. The process is based on conventional magnetron sputtering with the addition of a higher density, inductively coupled RF plasma between the sputtering cathode and the substrate. This new technology enables deposition of the films into deep submicron contacts with >50% bottom coverage. In addition to enhancing step coverage of metal films, such as Ti and TiN, this process also has significant effects on the materials properties of the films. The film properties of the TiN films were studied as a function of the fundamental process parameters, namely DC target power, RF coil power, and chamber process pressure, using statistical DOE technique. The study shows that a high degree of control over the film properties can be obtained in the IMP process.

Citation Download Citation

Simon Hui, Ken Ngan, Murali K. Narasimhan, and John Forster "Statistical design of experimental analysis of TiN films deposited by ion metal plasma PVD for sub-0.25-um IC process applications", Proc. SPIE 3214, Multilevel Interconnect Technology, (5 September 1997); https://doi.org/10.1117/12.284659

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