Comparison of best process focus and machine focus

Yi-Chuan Lo; Chih-Hsiung Lee; Yang-Tung Fan; Chih-Kung Chang; Kuo-Liang Lu

doi:10.1117/12.284644

25 August 1997 Comparison of best process focus and machine focus

Yi-Chuan Lo, Chih-Hsiung Lee, Yang-Tung Fan, Chih-Kung Chang, Kuo-Liang Lu

Proceedings Volume 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III; (1997) https://doi.org/10.1117/12.284644
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

The focus window of various topographies and substrate (borophosphosilicategass, plasma enhanced oxide and Al/Si/Cu) is discussed in this paper. Also the electric test data and Cp yield with different focus are introduced. Finally, the usable depth of focus, auto focus system and simulation model are applied to describe the difference between machine and process best focus.

Citation Download Citation

Yi-Chuan Lo, Chih-Hsiung Lee, Yang-Tung Fan, Chih-Kung Chang, and Kuo-Liang Lu "Comparison of best process focus and machine focus", Proc. SPIE 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III, (25 August 1997); https://doi.org/10.1117/12.284644

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