Ultrathin oxide for sub-0.25-um technology in silicon ICs: impact of stacking and nitridation

Pradip K. Roy; Yi Ma

doi:10.1117/12.284620

27 August 1997 Ultrathin oxide for sub-0.25-μm technology in silicon ICs: impact of stacking and nitridation

Pradip K. Roy, Yi Ma

Proceedings Volume 3212, Microelectronic Device Technology; (1997) https://doi.org/10.1117/12.284620
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

We have developed a thin (35, 50 and 65 angstrom) gate oxidation process for Lucent's sub-0.25 micrometer technologies and their enhancement modules. These oxides have significantly improved quality (defect density < 0.3/cm², E_bd > 18 MV/cm, log N_bd > -0.3 C/cm² and D_it and O_f < 2 X 10¹⁰/cm²-eV) as a result of stacking and nitridation. Impacts of stacking and nitridation on leakage (D_o), breakdown (E_bd), wear-out (N_bd) and charge trapping behavior (D_it and Q_f) are more dramatic for thinner (35 and 50 angstrom) oxides where Si/SiO₂ interfacial sub-structure plays a dominant role. Stacked oxide generates a planar and stress-free interface due to stress modulation during densification/oxidation. These stress- budgeted oxides are more resistant to process/induced damage that causes variability in MOSFET parameters and degradation during hot-carrier and Fowler-Nordhaim stressing. Light nitrogen incorporation (less than 5%) improves thickness uniformity, charge-to-breakdown (N_bd) and endurance, nitrogen incorporation also reduces Si-H bonds by replacing with Si-N bonds resulting in a reduction traps and increased interface resistance to current stress.

Citation Download Citation

Pradip K. Roy and Yi Ma "Ultrathin oxide for sub-0.25-μm technology in silicon ICs: impact of stacking and nitridation", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); https://doi.org/10.1117/12.284620

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