Paper
20 February 1998 Transition radiation effect in film or foil stack and short-wavelength free-electron lasers (FEL)
Kefei Ruan, Zuqi Yan, Guifang Ji
Author Affiliations +
Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300646
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
This paper discusses some questions about transition radiation effect in film or foil stack, analyses stimulated amplification of optical wave in film or foil stack. In this paper, authors research the possible model about transition radiation effect and ring crystal resonator apply to short wavelength FEL.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kefei Ruan, Zuqi Yan, and Guifang Ji "Transition radiation effect in film or foil stack and short-wavelength free-electron lasers (FEL)", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300646
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Free electron lasers

Radiation effects

Analytical research

Crystals

Resonators

RELATED CONTENT

Advances in cathodes for high-current rf photoinjectors
Proceedings of SPIE (July 19 1999)
Mode Competition, Suppression And Control In Fel Oscillators
Proceedings of SPIE (November 18 1989)
Cooperation effect of radiation in Nd:YAP
Proceedings of SPIE (June 17 1993)
Stable properties of Ti:sapphire laser
Proceedings of SPIE (April 10 1995)
Metallodielectric photonic crystal resonators
Proceedings of SPIE (June 01 2004)

Back to Top