Photoluminescence of fullerene thin films prepared at various substrate temperatures

Keiichi Kaneto; Hideki Hasegawa

doi:10.1117/12.283760

1 November 1997 Photoluminescence of fullerene thin films prepared at various substrate temperatures

Keiichi Kaneto, Hideki Hasegawa

Proceedings Volume 3142, Fullerenes and Photonics IV; (1997) https://doi.org/10.1117/12.283760
Event: Optical Science, Engineering and Instrumentation '97, 1997, San Diego, CA, United States

Abstract

Photoluminescences (PL) and electrical conductivities of evaporated C₇₀ films prepared at various substrate temperatures are studied. In C₇₀ films prepared at low substrate temperatures, a PL peak at 1.79 eV are strongly observed, besides several peaks at 1.55, 1.67, 1.71 eV observed in the films deposited at high substrate temperatures. Thermal annealing of the films prepared at low substrate temperatures turns into the characteristic of the spectra prepared at high substrate temperatures. A novel memory effect of highly conductive state in fullerene films of C₆₀ and C₇₀, which is attained by a treatment of high electric fields at high substrate temperatures is also mentioned.

Citation Download Citation

Keiichi Kaneto and Hideki Hasegawa "Photoluminescence of fullerene thin films prepared at various substrate temperatures", Proc. SPIE 3142, Fullerenes and Photonics IV, (1 November 1997); https://doi.org/10.1117/12.283760

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