Influence of defects on photoluminescence in C60 crystals

Masaru Tachibana; Kazuki Nishimura; Takeshi Komatsu; Takaaki Sunakawa; Kenichi Kojima

doi:10.1117/12.279250

1 November 1997 Influence of defects on photoluminescence in C₆₀ crystals

Masaru Tachibana, Kazuki Nishimura, Takeshi Komatsu, Takaaki Sunakawa, Kenichi Kojima

Proceedings Volume 3142, Fullerenes and Photonics IV; (1997) https://doi.org/10.1117/12.279250
Event: Optical Science, Engineering and Instrumentation '97, 1997, San Diego, CA, United States

Abstract

Photoluminescence spectra of C₆₀ crystals with high quality was measured before and after the mechanical deformation . New peak at 685 nm appeared after the deformation. The peak was observed only at temperatures lower than about 90 K, where its intensity decrease with increasing temperature. The temperature dependence of the peak intensity was correlated with that of main other peak at 735 nm, which would originate in intrinsic C₆₀ crystals. From these result, the origin of the peak at 685 nm is discussed in the light of crystal defects, especially dislocations.

Citation Download Citation

Masaru Tachibana, Kazuki Nishimura, Takeshi Komatsu, Takaaki Sunakawa, and Kenichi Kojima "Influence of defects on photoluminescence in C₆₀ crystals", Proc. SPIE 3142, Fullerenes and Photonics IV, (1 November 1997); https://doi.org/10.1117/12.279250

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