Optical properties and modeling of flash VUV-induced silicon oxynitride isotropic deposition that is water and hydroxyl free

Jean Flicstein; J. Mba; J.-M. Le Solliec; Jean Francois Palmier

doi:10.1117/12.271778

2 April 1997 Optical properties and modeling of flash VUV-induced silicon oxynitride isotropic deposition that is water and hydroxyl free

Jean Flicstein, J. Mba, J.-M. Le Solliec, Jean Francois Palmier

Author Affiliations +

Proceedings Volume 3091, Laser Applications Engineering (LAE-96); (1997) https://doi.org/10.1117/12.271778
Event: International Symposium on Intensive Laser Actions and Their Applications and Laser Applications Engineering, 1996, St. Petersburg-Pushkin, Russian Federation

Abstract

SiO_xN_y for micro- and optoelectronics is obtained from low-pressure vapor deposition reaction induced by a novel flash lamp which irradiates a precursor mixture NH₃/SiH₄/N₂O in deep ultraviolet (160 - 260 nm) and IR. Amorphous thin films are resulted within the composition of silicon oxynitride. Flow ratio of precursors and flashtubes were varied to produce a range of x and y. The detailed properties have been investigated using ellipsometry, infrared absorption, auger electron spectroscopy, and atomic force microscope. The hydrogen concentrations, as N-H bonds, were low, in the range (2 - 5)10²³ H atoms.cm^-3. All samples deposited at 400 degrees Celsius are isotropic and homogeneous in hydrogen content. No absorption bands of O-H, Si-H and H₂O are detected in the range of the FTIR spectra. A Monte Carlo type model is well adapted to simulate the morphology tendencies for SiO_xN_y film isotropy improvement.

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Jean Flicstein, J. Mba, J.-M. Le Solliec, and Jean Francois Palmier "Optical properties and modeling of flash VUV-induced silicon oxynitride isotropic deposition that is water and hydroxyl free", Proc. SPIE 3091, Laser Applications Engineering (LAE-96), (2 April 1997); https://doi.org/10.1117/12.271778

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