Laser excitation of thermal waves for remote control of Si wafers in plasma-etching process

Alexander A. Karabutov; Viktor Vitalievitch Klevitskii; Alexander P. Kubyshkin; Vladislav Ya. Panchenko

doi:10.1117/12.271779

2 April 1997 Laser excitation of thermal waves for remote control of Si wafers in plasma-etching process

Alexander A. Karabutov, Viktor Vitalievitch Klevitskii, Alexander P. Kubyshkin, Vladislav Ya. Panchenko

Proceedings Volume 3091, Laser Applications Engineering (LAE-96); (1997) https://doi.org/10.1117/12.271779
Event: International Symposium on Intensive Laser Actions and Their Applications and Laser Applications Engineering, 1996, St. Petersburg-Pushkin, Russian Federation

Abstract

The method of the thickness and temperature field measurement in Si wafers is discussed. Laser excitation of thermal waves and their diffusion in depth and lateral directions are used. Thermal wave is detected by IR radiometry. The pulsed laser illumination of wafers under testing are discussed. The investigation of depth and lateral diffusion of heat processes to determine the thickness and thermal diffusivity separately. The accuracy, reliability and resolution of the method proposed are discussed.

Citation Download Citation

Alexander A. Karabutov, Viktor Vitalievitch Klevitskii, Alexander P. Kubyshkin, and Vladislav Ya. Panchenko "Laser excitation of thermal waves for remote control of Si wafers in plasma-etching process", Proc. SPIE 3091, Laser Applications Engineering (LAE-96), (2 April 1997); https://doi.org/10.1117/12.271779

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