Scatterometric process monitor for silylation

Shoaib H. Zaidi; John Robert McNeil; S. Sohail H. Naqvi

doi:10.1117/12.275915

7 July 1997 Scatterometric process monitor for silylation

Shoaib H. Zaidi, John Robert McNeil, S. Sohail H. Naqvi

Proceedings Volume 3050, Metrology, Inspection, and Process Control for Microlithography XI; (1997) https://doi.org/10.1117/12.275915
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

The silylation step in the top surface imaging process has been difficult to monitor and characterize for lack of appropriate metrology tools. Utilizing scatterometry to measure silylated wafers, we report successful monitoring of processing effects. Wafers were manufactured under nominally identical processing conditions. Applying scatterometry, we are able to discern location dependent variations within wafers. In addition, wafer to wafer variations are also observe. Both these variations are detrimental to yield. Variations in processing conditions cause modifications and perturbations in the gratings. Different gratings diffract light in a dissimilar manner. Processing conditions and their effects on the wafers are deduced from these measurements using computational analysis. This information is used to detect unwanted variations in processing conditions so that corrective responses can be implemented. This technique is rapid, non-destructive and sensitive to changes introduced by the silylation process.

Citation Download Citation

Shoaib H. Zaidi, John Robert McNeil, and S. Sohail H. Naqvi "Scatterometric process monitor for silylation", Proc. SPIE 3050, Metrology, Inspection, and Process Control for Microlithography XI, (7 July 1997); https://doi.org/10.1117/12.275915

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