Laser-specific photochemistry and lithography of DNQ-4-sulfonic-acid-ester-based photoresists

Juergen Bendig; Siegrun Helm; A. Uhl; Lothar Bauch

doi:10.1117/12.275853

7 July 1997 Laser-specific photochemistry and lithography of DNQ-4-sulfonic-acid-ester-based photoresists

Juergen Bendig, Siegrun Helm, A. Uhl, Lothar Bauch

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275853
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

The photolysis of DNQ-4-sulfonic acid esters yields 3- indenecarboxylic acid-1-sulfonic ester (3-ICA-1-SE). 3-ICA-1- SE reacts to the corresponding sulfonic acid. The rate of the ester cleavage is fast at exposure and slow in the dark. The deep UV lamp or laser exposure using low intensity is most effective for acid generation, pH change and network formation (image reversal).

Citation Download Citation

Juergen Bendig, Siegrun Helm, A. Uhl, and Lothar Bauch "Laser-specific photochemistry and lithography of DNQ-4-sulfonic-acid-ester-based photoresists", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275853

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