Effects of DUV resist sensitivities on lithographic process window

Kevin G. Kemp; Daniel J. Williams; Joseph W. Cayton; Peter Steege; Steve D. Slonaker; Richard C. Elliott

doi:10.1117/12.275895

7 July 1997 Effects of DUV resist sensitivities on lithographic process window

Kevin G. Kemp, Daniel J. Williams, Joseph W. Cayton, Peter Steege, Steve D. Slonaker, Richard C. Elliott

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275895
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

DUV lithography is rapidly becoming the technology of choice for the manufacture of semiconductor devices with minimum geometry features below 0.35 micrometer. Beyond traditional exposure performance metrics such as depth of focus and exposure energy latitude, the enhanced sensitivities of chemically amplified resists to process parameters including airborne amine concentration, post exposure delay time, and post exposure bake temperature significantly affect the available process window. A critical dimension error budget model is used to compare experimentally determined wafer-to- wafer, within-wafer and intrafield linewidth variation against predicted values based on measured process sensitivities and tool performance parameters. The relative error contributions due to each source of linewidth variation and each technology component of the lithography process are discussed. Post exposure bake temperature is identified as a significant contributor to the measured within-wafer linewidth variation of 10.4 nm at 3 sigma when using APEX-E photoresist. Photomask linewidth non-uniformity is identified as a significant contributor to the measured intrafield variation of 15.8 nm at 3 sigma.

Citation Download Citation

Kevin G. Kemp, Daniel J. Williams, Joseph W. Cayton, Peter Steege, Steve D. Slonaker, and Richard C. Elliott "Effects of DUV resist sensitivities on lithographic process window", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275895

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