ArF photoresist system using alicyclic polymer

Joo Hyeon Park; Seong-Ju Kim; Sun-Yi Park; Hosull Lee; Jae Chang Jung; Cheol-Kyu Bok; Ki-Ho Baik

doi:10.1117/12.275850

7 July 1997 ArF photoresist system using alicyclic polymer

Joo Hyeon Park, Seong-Ju Kim, Sun-Yi Park, Hosull Lee, Jae Chang Jung, Cheol-Kyu Bok, Ki-Ho Baik

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275850
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

We have developed a chemically amplified photoresist for use in ArF lithography based on alicyclic polymer. 3- Bicyclo(2,2,1)hept-2-yl-3-(2-methyl allyoxy)-propionic acid tert-butyl ester (BHPE) was prepared as a new kind of protected acid-labile monomer. Terpolymer, poly(BHPE-NBO-MAL), was prepared with BHPE, 5-norbornen-2-ol (NBO), and maleic anhydride (MAL) monomers by radical polymerization. Photoresist of poly(BHPE-NBO-MAL) displayed good adhesion, dry-etch resistance, and development. As a result, we obtained 0.16 micrometer line-and-space positive patterns with 2.38 wt% TMAH aqueous solution using an ArF exposure system.

Citation Download Citation

Joo Hyeon Park, Seong-Ju Kim, Sun-Yi Park, Hosull Lee, Jae Chang Jung, Cheol-Kyu Bok, and Ki-Ho Baik "ArF photoresist system using alicyclic polymer", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275850

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