Paper
7 July 1997 60-nm copper lines produced by a lift-off technique with 5-keV electrons: experiment and simulation
Ulrich A. Jagdhold, Lothar Bauch, Monika Boettcher
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Abstract
We present a lift-off technique based on a single layer resist system which produces sub-100 nm structures of a metallization layer using a low-voltage electron beam lithography. By using an accelerating voltage of 5 keV an undercut of the resist profile after electron beam lithography is used to interrupt the anisotropically deposited copper layer so that a lift-off process produces structures for metallization layers. The two dimensional simulation of the whole process is based on a Monte-Carlo electron scattering calculation to describe the electron exposure, a cell-removal-algorithm to obtain the resist profiles after wet development and a string-algorithm to simulate the copper deposition. By optimizing this process, where the simulation assists the experiment, structures down to 60 nm are fabricated.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ulrich A. Jagdhold, Lothar Bauch, and Monika Boettcher "60-nm copper lines produced by a lift-off technique with 5-keV electrons: experiment and simulation", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275877
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KEYWORDS
Copper

Monte Carlo methods

Photoresist processing

Metals

Scattering

Electron beam lithography

Silicon

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