Paper
25 April 1997 Optimization of noise and responsivity in CMOS active pixel sensors for detection of ultralow-light levels
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Abstract
In this paper, we present results of the investigation of the design and operation of CMOS active pixel sensors for detection of ultra-low light levels. We present a detailed noise model of APS pixel and signal chain. Utilizing the noise model, we have developed APS pixel designs that can achieve ultra-low noise and high responsivity. We present results from two test chips, that indicate (1) that less than 5 electrons of read noise is possible with CMOS APS by reducing the size of the pixel transistors, and (2) that high responsivity can be achieved when the fill-factor of the photodiode is reduced.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Orly Yadid-Pecht, Karmak Mansoorian, Eric R. Fossum, and Bedabrata Pain "Optimization of noise and responsivity in CMOS active pixel sensors for detection of ultralow-light levels", Proc. SPIE 3019, Solid State Sensor Arrays: Development and Applications, (25 April 1997); https://doi.org/10.1117/12.275185
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Cited by 51 scholarly publications and 7 patents.
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KEYWORDS
Transistors

Capacitance

Interference (communication)

CMOS sensors

Sensors

Electrons

Active sensors

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