Effect of barrier layer thickness on the performance of thin film transistors on glass substrates

J. Gregory Couillard; Dieter G. Ast; Chad B. Moore; Francis P. Fehlner

doi:10.1117/12.270292

10 April 1997 Effect of barrier layer thickness on the performance of thin film transistors on glass substrates

J. Gregory Couillard, Dieter G. Ast, Chad B. Moore, Francis P. Fehlner

Proceedings Volume 3014, Active Matrix Liquid Crystal Displays Technology and Applications; (1997) https://doi.org/10.1117/12.270292
Event: Electronic Imaging '97, 1997, San Jose, CA, United States

Abstract

Top-gated poly-Si thin film transistors (TFTs) were fabricated on Corning COde 1737 glass substrates coated with SiO₂ barrier layers of varying thickness. The leakage current, or minimum current in the off state of the transistor, was measured and analyzed to evaluate the influence of barrier layer thickness on the TFT characteristics. Our results indicate that using a thick barrier layer may results in higher TFT leakage currents. Control devices on oxidized silicon have higher leakage currents than TFTs on barrier coated Code 1737 glass. Those on glass substrates show the effect of barrier layer thickness. As the barrier layer thickness increases the leakage current also increase. One possible explanation for this is the nature of the glass substrate. Even a thin SiO₂ layer can suppress diffusion of electrically active impurities from the substrate to the device. However, aluminoborosilicate glasses such as Corning Code 1737 are also known to act as sinks for sodium and other process impurities. Thick barrier layers separate the TFT from the gettering effects of the substrate and limit the removal of impurities from the device region.

Citation Download Citation

J. Gregory Couillard, Dieter G. Ast, Chad B. Moore, and Francis P. Fehlner "Effect of barrier layer thickness on the performance of thin film transistors on glass substrates", Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997); https://doi.org/10.1117/12.270292

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available