Microstructure and interface properties of laterally oxidized AlxGal-xAs

Ray D. Twesten; David M. Follstaedt; Kent D. Choquette

doi:10.1117/12.271072

4 April 1997 Microstructure and interface properties of laterally oxidized Al_xGa_{1- x}As

Ray D. Twesten, David M. Follstaedt, Kent D. Choquette

Proceedings Volume 3003, Vertical-Cavity Surface-Emitting Lasers; (1997) https://doi.org/10.1117/12.271072
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

The microstructure and interface properties of Al_xGa_{1- x}As materials that have been laterally oxidized in wet N₂ for several compositions (x equals 0.80, 0.82 . . . 1.00) and temperatures (360 degrees Celsius to 450 degrees Celsius) have been studied. The micro-structure is found to be relatively insensitive to composition and oxidation temperature. The oxidation forms an amorphous solid solution (Al_xGa_1-x)₂O₃ that transforms to polycrystalline, (gamma) -(Al_xGa_1-x)₂O₃ under electron beam exposure in the electron microscope. Evidence suggests a small fraction of crystalline (Al_xGa_{1- x})₂O₃ is formed via post oxidation annealing of the oxide. The level of hydrogen present in the oxidized layers is 1.1 multiplied by 10²¹ cm^-3, which is too low for the amorphous phase observed to be a hydroxide rather than an oxide. The amount of As in the layer is reduced to less than 2 atm%, and no As precipitates are observed. The (Al_xGa_1-x)₂O₃/GaAs interface is abrupt, but prolonged oxidation will cause the GaAs to oxidize at the internal interfaces. The reaction front between the oxidized and the unoxidized Al_xGa_1-xAs has a 10 to 20 nm-wide amorphous zone that shows a different contrast than the remainder of the amorphous oxide and is stable under electron irradiation.

Citation Download Citation

Ray D. Twesten, David M. Follstaedt, and Kent D. Choquette "Microstructure and interface properties of laterally oxidized Al_xGa_{1- x}As", Proc. SPIE 3003, Vertical-Cavity Surface-Emitting Lasers, (4 April 1997); https://doi.org/10.1117/12.271072

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available