GaInAsSb/AlGaAsSb diode lasers grown by organometallic vapor phase epitaxy

Christine A. Wang; Hong K. Choi

doi:10.1117/12.273802

2 May 1997 GaInAsSb/AlGaAsSb diode lasers grown by organometallic vapor phase epitaxy

Christine A. Wang, Hong K. Choi

Proceedings Volume 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared; (1997) https://doi.org/10.1117/12.273802
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy are reported. The laser structure consists of n- and p-doped Al_0.59Ga_0.41As_0.05Sb_0.95 cladding layer, Al_0.28Ga_0.72As_0.02Sb_0.98 confining layers, and four 15-nm- thick Ga_0.87In_0.13As_0.12Sb_0.88 quantum wells with 20-nm-thick Al_0.28Ga_0.72As_0.02Sb_0.98 barrier layers. These lasers, emitting at 2.1 micrometers , have exhibited pulsed threshold current densities as low as 1.2 kA/cm².

Citation Download Citation

Christine A. Wang and Hong K. Choi "GaInAsSb/AlGaAsSb diode lasers grown by organometallic vapor phase epitaxy", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273802

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