3 to 5-um lasers employing GaInSb/InAs superlattice active layers

Alan R. Kost; L. West; Richard H. Miles; Tom C. Hasenberg

doi:10.1117/12.273801

2 May 1997 3 to 5-um lasers employing GaInSb/InAs superlattice active layers

Alan R. Kost, L. West, Richard H. Miles, Tom C. Hasenberg

Proceedings Volume 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared; (1997) https://doi.org/10.1117/12.273801
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

We demonstrate midwave infrared diode lasers than span the 3 - 4 micrometers range. Laser active regions are multiple quantum well structures with GaInSb/InAs, type-II, broken gap superlattices for the wells and GaInAsSb for the barriers. The superlattice constituents and dimensions were tailored to reduce losses from Auger recombination. AlSb/InAs superlattices are used for both n-type and p-type laser cladding regions. A device with emission at 3.2 micrometers lased up to 255 K. We have achieved 75 mW per facet at 3.0 micrometers at an operating temperature of 140 K with an 85 microsecond(s) ec input current pulse. Device output appears to be limited by resistive heating. A four-layer, strain-balanced superlattice design offers greater laser efficiency.

Citation Download Citation

Alan R. Kost, L. West, Richard H. Miles, and Tom C. Hasenberg "3 to 5-um lasers employing GaInSb/InAs superlattice active layers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273801

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